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| 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number 2N5432 2N5433 2N5434 VGS(off) (V) -4 to -10 -3 to -9 -1 to -4 rDS(on) Max (W) 5 7 10 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 2.5 2.5 2.5 Features D D D D D Low On-Resistance: 2N5432 <5 W Fast Switching--tON: 2.5 ns High Off-Isolation--ID(off): 10 pA Low Capacitance: 11 pF Low Insertion Loss Benefits D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The 2N5432/5433/5434 are suitable for high-performance analog switching and amplifier applications. Breakdown voltage characteristics, low on-resistance, and very fast switching make these devices are ideal for a wide range of applications. The hermetically-sealed TO-206AC (TO-52) package is suitable for processing per MIL-S-19500 (see Military Information). For similar products in TO-236 (SOT-23) or TO-226AA (TO-92) packages, see the J/SST108 series data sheet. TO-206AC (TO-52) S 1 2 D Top View 3 G and Case Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2.4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70245. Siliconix S-52424--Rev. E, 14-Apr-97 1 2N5432/5433/5434 Specificationsa Limits 2N5432 2N5433 2N5434 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) VDS(on) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 3 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 150_C VGS = 0 V ID = 10 mA V, IG = 1 mA , VDS = 0 V -32 -25 -4 150 -10 -25 -3 100 -200 -200 -200 -200 -9 -25 V -1 30 -200 -200 -4 mA pA nA pA -5 -10 -10 10 20 200 200 50 2 5 200 200 70 7 200 200 100 10 nA mV W V Drain Cutoff Current Drain-Source On-Voltage Drain-Source On-Resistance Gate-Source Forward Voltaged 0.7 Dynamic Common-Source Forward Transconductance d Common-Source Output Conductanced Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos rds(on) Ciss Crss en VDS = 5 V, ID = 10 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz 20 VDS = 0 V, VGS = -10 V S f = 1 MHz 11 3.5 15 15 15 nV Hz 17 VDS = 5 V, ID = 10 mA S f = 1 kHz 600 5 30 7 30 10 30 pF mS mS W Switching Turn-On Turn On Timec td(on) tr Turn-Off Timec td(off) tf VDD = 1.5 V, VGS(H) = 0 V () See Switching Ci i S S i hi Circuit 2 0.5 4 18 4 1 6 30 4 1 6 30 4 1 6 30 NIP ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. 2 Siliconix S-52424--Rev. E, 14-Apr-97 2N5432/5433/5434 Typical Characteristics 20 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V 1000 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA) 200 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz g os - Output Conductance (mS) 16 800 160 40 12 rDS 600 120 gfs 30 8 IDSS 400 80 gos 20 4 200 40 10 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 100 Output Characteristics VGS(off) = -2 V 100 Output Characteristics VGS(off) = -4 V 80 I D - Drain Current (mA) I D - Drain Current (mA) 80 60 VGS = 0 V -0.2 V -0.4 V 60 -0.5 V 40 VGS = 0 V 40 -1.0 V 20 -1.5 V -0.2 V 0 20 -0.6 V -0.8 V 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-Source Voltage (V) 5 Turn-On Switching tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = -10 V Switching Time (ns) td(on) ID = 10 mA ID = 25 mA 30 Turn-Off Switching td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 4 Switching Time (ns) 24 3 18 tf VGS(off) = -8 V VGS(off) = -2 V 2 12 1 tr 6 td(off) 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 5 10 15 20 25 ID - Drain Current (mA) Siliconix S-52424--Rev. E, 14-Apr-97 3 2N5432/5433/5434 Typical Characteristics (Cont'd) 50 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) TA = 25_C 40 On-Resistance vs. Temperature ID = 10 mA rDS changes X 0.7%/_C 40 32 30 VGS(off) = -2 V 24 VGS(off) = -2 V 20 16 -4 V 8 -8 V -4 V 10 -8 V 0 1 10 ID - Drain Current (mA) 100 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 100 Capacitance vs. Gate-Source Voltage VDS = 0 V f = 1 MHz 100 nA Gate Leakage Current TA = 125_C ID = 10 mA 80 Capacitance (pF) I G - Gate Leakage 10 nA 5 mA 60 1 nA 1 mA IGSS @ 125_C 5 mA TA = 25_C 10 mA 1 mA IGSS @ 25_C 40 Ciss 20 Crss 100 pA 10 pA 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) 100 Noise Voltage vs. Frequency g fs - Forward Transconductance (mS) VDS = 5 V 100 Transconductance vs. Drain Current VGS(off) = -4 V (nV / Hz) TA = -55_C 10 125_C 25_C e n - Noise Voltage 10 ID = 10 mA VDS = 5 V f = 1 kHz 1 ID = 40 mA 1 10 100 1k f - Frequency (Hz) 10 k 100 k 1 10 ID - Drain Current (mA) 100 4 Siliconix S-52424--Rev. E, 14-Apr-97 2N5432/5433/5434 Typical Characteristics (Cont'd) 100 Common Gate Input Admittance gig 100 Common Gate Forward Admittance -gfg 10 (mS) (mS) 10 bfg 1 big TA = 25_C VDG = 20 V ID = 20 mA 0.1 10 20 50 100 f - Frequency (MHz) 0.1 10 20 50 100 f - Frequency (MHz) 1 TA = 25_C VDG = 20 V ID = 20 mA 10 Common Gate Reverse Admittance TA = 25_C VDG = 20 V ID = 20 mA 100 Common Gate Output Admittance TA = 25_C VDG = 20 V ID = 20 mA 1.0 (mS) -grg -brg (mS) 10 bog gog 0.1 1 0.01 10 20 50 100 f - Frequency (MHz) 0.1 10 20 50 100 f - Frequency (MHz) Switching Time Test Circuit VDD 2N5432 VGS(L) RL* ID(on) *Non-inductive -12 V 145 W 10 mA 2N5433 -12 V 143 W 10 mA 2N5434 -12 V 140 W 10 mA VGS(H) VGS(L) RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope 1 kW 51 W 51 W Siliconix S-52424--Rev. E, 14-Apr-97 5 |
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